| Type |
NPN |
| Configuration |
Dual |
| Maximum Collector-Emitter Voltage (V) |
65 |
| Maximum Collector Base Voltage (V) |
80 |
| Maximum Emitter Base Voltage (V) |
6 |
| Maximum DC Collector Current (A) |
0.1 |
| Minimum Transition Frequency (MHz) |
100 |
| Maximum Power Dissipation (mW) |
300 |
| Typical Output Capacitance (pF) |
1.9 |
| Maximum Noise Figure (dB) |
3.1(Typ) |
| Operating Junction Temperature (°C) |
150 |
| Maximum Emitter Cut-Off Current (nA) |
100 |
| Maximum Junction Ambient Thermal Resistance |
625°C/W |
| Typical Input Capacitance (pF) |
11 |
| Collector Current for VCE Saturation (mA) |
10|100 |
| Maximum Collector Cut-Off Current (nA) |
15 |
| Maximum Collector-Emitter Saturation Voltage (V) |
0.1@0.5mA@10mA|0.3@5mA@100mA |
| Maximum Base Emitter Saturation Voltage (V) |
0.85@0.5mA@10mA |
| Category |
Bipolar Small Signal |
| Minimum DC Current Gain |
200@2mA@5V |
| Number of Elements per Chip |
2 |
| Minimum Storage Temperature (°C) |
-65 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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