Type |
NPN |
Configuration |
Single |
Maximum Collector-Emitter Voltage (V) |
30 |
Maximum Collector Base Voltage (V) |
30 |
Maximum Emitter Base Voltage (V) |
5 |
Maximum DC Collector Current (A) |
0.1 |
Minimum Transition Frequency (MHz) |
100 |
Material |
Si |
Maximum Power Dissipation (mW) |
300 |
Maximum Noise Figure (dB) |
10 |
Maximum Junction Ambient Thermal Resistance |
556°C/W |
Typical Output Capacitance (pF) |
4.5(Max) |
Operating Junction Temperature (°C) |
-55 to 150 |
Maximum Collector Cut-Off Current (nA) |
15 |
Maximum Collector-Emitter Saturation Voltage (V) |
0.25@0.5mA@10mA|0.6@5mA@100mA |
Maximum Base Emitter Saturation Voltage (V) |
0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA |
Category |
Bipolar Small Signal |
Minimum DC Current Gain |
200@2mA@5V |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |