Parametric Info |
|
Channel Type |
N |
Channel Mode |
Enhancement |
Configuration |
Single |
Maximum Drain Source Voltage (V) |
50 |
Maximum Continuous Drain Current (A) |
0.2 |
Maximum Gate Source Voltage (V) |
±20 |
Maximum Drain Source Resistance (mOhm) |
3500@10V |
Operating Junction Temperature (°C) |
-55 to 150 |
Maximum Power Dissipation (mW) |
300 |
Minimum Gate Threshold Voltage (V) |
0.5 |
Category |
Small Signal |
Typical Output Capacitance (pF) |
25(Max) |
Maximum Junction Ambient Thermal Resistance |
417°C/W |
Maximum Positive Gate Source Voltage (V) |
20 |
Typical Input Capacitance @ Vds (pF) |
50(Max)@10V |
Typical Gate Threshold Voltage (V) |
1.2 |
Typical Reverse Transfer Capacitance @ Vds (pF) |
8(Max)@10V |
Typical Forward Transconductance (S) |
0.1(Min) |
Maximum Pulsed Drain Current @ TC=25°C (A) |
1 |
Typical Turn-On Delay Time (ns) |
20(Max) |
Typical Turn-Off Delay Time (ns) |
20(Max) |
Maximum Gate Source Leakage Current (nA) |
100 |
Maximum Gate Threshold Voltage (V) |
1.5 |
Maximum IDSS (uA) |
0.5 |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |
Supplier Temperature Grade |
Commercial |