type |
NPN |
Configuration |
Single |
Maximum Collector-Emitter Voltage (V) |
40 |
Maximum Collector Base Voltage (V) |
60 |
Maximum Emitter Base Voltage (V) |
6 |
Maximum DC Collector Current (A) |
0.2 |
Maximum Power Dissipation (mW) |
350 |
Typical Input Capacity (pF) |
8(Max) |
Typical Output Capacitance (pF) |
4(Max) |
Maximum Junction Ambient Thermal Resistance |
357°C/W |
Maximum Junction Case Thermal Resistance |
185°C/W |
Maximum Noise Figure (dB) |
5 |
Maximum Delay Time (ns) |
35 |
Maximum Rise Time (ns) |
35 |
Maximum Storage Time (ns) |
200 |
Maximum Fall Time (ns) |
50 |
Operating Junction Temperature (°C) |
-55 to 150 |
Maximum Collector Cut-Off Current (nA) |
50 |
Maximum Collector-Emitter Saturation Voltage (V) |
0.2@1mA@10mA|0.3@5mA@50mA |
Maximum Base Emitter Saturation Voltage (V) |
0.85@1mA@10mA|0.95@5mA@50mA |
Category |
Bipolar Small Signal |
Minimum DC Current Gain |
40@0.1mA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V |
Number of Elements per Chip |
1 |
Maximum Transition Frequency (MHz) |
300(Min) |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |