MMBTA06LT1G onsemi TRANS NPN 80V 0.5A SOT23

2024/02/27 280

• S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC−Q101Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

CATALOG

China

Type	NPN
Configuration	Single
Maximum Collector-Emitter Voltage (V)	80
Maximum Collector Base Voltage (V)	80
Maximum Emitter Base Voltage (V)	4
Maximum DC Collector Current (A)	0.5
Material	Si
Maximum Power Dissipation (mW)	300
Maximum Junction Ambient Thermal Resistance	556°C/W
Operating Junction Temperature (°C)	-55 to 150
Maximum Collector Cut-Off Current (nA)	100
Maximum Collector-Emitter Saturation Voltage (V)	0.25@10mA@100mA
Category	Bipolar Small Signal
Minimum DC Current Gain	100@10mA@1V\|100@100mA@1V
Number of Elements per Chip	1
Maximum Transition Frequency (MHz)	100(Min)
Minimum Storage Temperature (°C)	-55
Maximum Storage Temperature (°C)	150
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150

MSL	1
Maximum Reflow Temperature (°C)	260
Reflow Solder Time (Sec)	30
Number of Reflow Cycle	3
Standard	N/A
Reflow Temp. Source	Link to Datasheet
Maximum Wave Temperature (°C)	N/R
Wave Solder Time (Sec)	N/R
Lead Finish(Plating)	Matte Sn annealed
Under Plating Material	N/A
Terminal Base Material	CuFeNi
Number of Wave Cycles	N/R

Packaging Suffix	T1
Packaging	Tape and Reel
Quantity Of Packaging	3000
Reel Diameter (in)	7
Reel Width (mm)	8.4(Min)
Tape Pitch (mm)	4
Tape Width (mm)	8
Feed Hole Pitch (mm)	4
Hole Center to Component Center (mm)	2
Component Orientation	Single Pin At Sprocket Hole
Packaging Document	Link to Datasheet
Tape Type	Embossed