| Density (bit) |
8G |
| Cell Type |
SLC NAND |
| Interface Type |
Parallel |
| Block Organization |
Symmetrical |
| Boot Block |
No |
| Timing Type |
Asynchronous |
| Architecture |
Sectored |
| Maximum Cycle Time (s) |
20n(Min) |
| Typical Operating Supply Voltage (V) |
3|3.3 |
| Programmability |
Yes |
| I/O Mode |
Parallel |
| Minimum Operating Temperature (°C) |
-40 |
| Maximum Operating Temperature (°C) |
85 |
| Supplier Temperature Grade |
Industrial |
| Number of Bits per Word (bit) |
8 |
| Number of Words |
1G |
| Maximum Operating Current (mA) |
35 |
| Sector Size |
256Kbyte x 4096 |
| Program Current (mA) |
35 |
| Address Bus Width (bit) |
31 |
| Minimum Operating Supply Voltage (V) |
2.7 |
| Maximum Operating Supply Voltage (V) |
3.6 |
| Maximum Erase Time (s) |
0.01/Block |
| Maximum Programming Time (ms) |
0.6/Page |
| Command Compatible |
No |
| ECC Support |
Yes |
| Erase Suspend/Resume Modes Support |
No |
| Simultaneous Read/Write Support |
No |
| Support of Common Flash Interface |
No |
| Support of Page Mode |
Yes |
| Page Size |
4Kbyte |
| Minimum Storage Temperature (°C) |
-65 |
| Maximum Storage Temperature (°C) |
150 |
| Density in Bits (bit) |
8589934592 |
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