Density (bit) |
256M |
Cell Type |
NOR |
Interface Type |
Serial (SPI, Dual SPI, Quad SPI) |
Block Organization |
Symmetrical |
Boot Block |
No |
Timing Type |
Synchronous |
Architecture |
Sectored |
Maximum Access Time (ns) |
8 |
Programmability |
Yes |
Typical Operating Supply Voltage (V) |
3.3 |
Maximum Cycle Time (s) |
40m |
Tradename |
MXSMIO® |
Minimum Operating Temperature (°C) |
-40 |
Maximum Operating Temperature (°C) |
85 |
Supplier Temperature Grade |
Industrial |
Number of Bits per Word (bit) |
1/2/4 |
Number of Words |
256M/128M/64M |
Maximum Operating Current (mA) |
30 |
Programming Voltage (V) |
2.7 to 3.6 |
Maximum Operating Frequency (MHz) |
120 |
Sector Size |
4Kbyte x 8192 |
Program Current (mA) |
25 |
Address Width (bit) |
32 |
Minimum Operating Supply Voltage (V) |
2.7 |
Maximum Operating Supply Voltage (V) |
3.6 |
Maximum Erase Time (s) |
150/Chip |
Maximum Programming Time (ms) |
0.75/Page |
Command Compatible |
Yes |
ECC Support |
No |
Erase Suspend/Resume Modes Support |
Yes |
Simultaneous Read/Write Support |
No |
Support of Common Flash Interface |
No |
Support of Page Mode |
No |
Page Size |
256byte |
Minimum Endurance (Cycles) |
100000(Typ) |
Minimum Storage Temperature (°C) |
-65 |
Maximum Storage Temperature (°C) |
150 |
Density in Bits (bit) |
268435456 |
Process Technology |
CMOS |