SM8S18AHE3_A/I Vishay General Semiconductor TVS DIODE 18VWM 29.2VC DO218AB

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2024/10/29 143
SM8S18AHE3_A/I Vishay General Semiconductor 	TVS DIODE 18VWM 29.2VC DO218AB


• Junction passivation optimized design passivated anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability and automotive requirement
• Available in unidirectional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912


CATALOG
SM8S18AHE3_A/I COUNTRY OF ORIGIN
SM8S18AHE3_A/I PARAMETRIC INFO
SM8S18AHE3_A/I PACKAGE INFO
SM8S18AHE3_A/I PACKAGING INFO
SM8S18AHE3_A/I ECAD MODELS


COUNTRY OF ORIGIN
Taiwan (Province of China)


PARAMETRIC INFO
Configuration Single
Direction Type Uni-Directional
Maximum Reverse Stand-Off Voltage (V) 18
Minimum Breakdown Voltage (V) 20
Maximum Clamping Voltage (V) 29.2
Maximum Reverse Leakage Current (uA) 10
Maximum Breakdown Voltage (V) 22.1
Number of Elements per Chip 1
Maximum Peak Pulse Current (A) 226
Test Current (mA) 5
Operating Junction Temperature (°C) -55 to 175
Minimum Storage Temperature (°C) -55
Maximum Storage Temperature (°C) 175
Peak Pulse Power Dissipation (W) 6600
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Automotive
Peak Forward Surge Current (A) 700
Tradename PAR®


PACKAGE INFO
Supplier Package DO-218AB
Pin Count 2
PCB 1
Tab Tab
Package Length (mm) 13.7(Max)
Package Width (mm) 8.7(Max)
Package Height (mm) 5(Max) - 0.4(Min)
Package Diameter (mm) N/R
Mounting Surface Mount
Package Family Name DO
Package Outline Link to Datasheet


PACKAGING INFO
Packaging Suffix _A/
Packaging Tape and Reel
Quantity Of Packaging 750
Packaging Document Link to Datasheet


ECAD MODELS

Продукт RFQ