Channel Type |
N |
Channel Mode |
Enhancement |
Configuration |
Single |
Maximum Drain Source Voltage (V) |
60 |
Maximum Continuous Drain Current (A) |
24 |
Maximum Gate Source Voltage (V) |
±18 |
Maximum Drain Source Resistance (mOhm) |
40@10V |
Typical Gate Charge @ Vgs (nC) |
13@10V |
Typical Gate Charge @ 10V (nC) |
13 |
Maximum Power Dissipation (mW) |
60000 |
Process Technology |
STripFET II |
Category |
Power MOSFET |
Typical Input Capacitance @ Vds (pF) |
660@25V |
Typical Turn-On Delay Time (ns) |
11 |
Typical Turn-Off Delay Time (ns) |
20 |
Typical Fall Time (ns) |
12 |
Typical Rise Time (ns) |
50 |
Maximum Gate Threshold Voltage (V) |
2.5 |
Number of Elements per Chip |
1 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
175 |