Density (bit) |
16M |
Cell Type |
NOR |
Interface Type |
Serial (SPI, Dual SPI, Quad SPI) |
Block Organization |
Symmetrical |
Boot Block |
Yes |
Timing Type |
Synchronous |
Architecture |
Sectored |
Maximum Access Time (ns) |
6 |
Programmability |
Yes |
Typical Operating Supply Voltage (V) |
3|3.3 |
Minimum Operating Temperature (°C) |
-40 |
Maximum Operating Temperature (°C) |
85 |
Supplier Temperature Grade |
Industrial |
Number of Bits per Word (bit) |
8 |
Number of Words |
2M |
Location of Boot Block |
Bottom|Top |
Maximum Operating Current (mA) |
25 |
Programming Voltage (V) |
2.7 to 3.6 |
Sector Size |
4Kbyte x 512 |
Program Current (mA) |
25 |
Address Width (bit) |
24 |
Minimum Operating Supply Voltage (V) |
2.7 |
Maximum Operating Supply Voltage (V) |
3.6 |
Maximum Erase Time (s) |
25/Chip |
Maximum Programming Time (ms) |
3/Page |
Command Compatible |
Yes |
ECC Support |
No |
Erase Suspend/Resume Modes Support |
Yes |
Simultaneous Read/Write Support |
No |
Support of Common Flash Interface |
No |
Support of Page Mode |
No |
Page Size |
256byte |
Minimum Endurance (Cycles) |
100000 |
Minimum Storage Temperature (°C) |
-65 |
Maximum Storage Temperature (°C) |
150 |
Density in Bits (bit) |
16777216 |