Infineon Introduces Next-Generation IGBT Chips to Support Rapid Growth in Electric Vehicle Market

As the electric vehicle (EV) market continues to accelerate, the sales of battery electric vehicles (BEVs) and plug-in hybrid electric vehicles (PHEVs) are seeing strong growth. By 2030, EV production is expected to experience double-digit growth, reaching approximately 45% of total vehicle production, up from 20% in 2024. To meet the growing demand for high-voltage automotive IGBT chips, Infineon Technologies has launched its next-generation products, including EDT3 (third-generation powertrain) chips designed for 400V and 800V systems, as well as RC-IGBT chips tailored specifically for 800V systems. These devices enhance the performance of powertrain systems, making them ideal for automotive applications.

The EDT3 and RC-IGBT bare dies are designed to offer high quality and reliable performance, enabling customers to create customized power modules. The EDT3 chips, compared to the previous EDT2 generation, show significant improvements, achieving up to 20% lower total losses under high loads, while maintaining high efficiency at low loads. This achievement is the result of an optimized design that minimizes chip losses and increases the maximum junction temperature, balancing high-load performance with low-load efficiency. Consequently, electric vehicles using EDT3 chips can achieve longer range and lower energy consumption, delivering a more sustainable and cost-effective driving experience.

Robert Hermann, Vice President of Infineon's Automotive High-Voltage Chips and Discretes division, stated:

“As a leading IGBT technology supplier, Infineon is committed to delivering exceptional performance and reliability. Our EDT3 solution helps customers achieve optimal results in their applications, driven by our strong focus on innovation and decarbonization.”

The EDT3 chipset is available in both 750V and 1200V grades, offering high output currents, making them ideal for inverter applications in various electric vehicles, including BEVs, PHEVs, and range-extended electric vehicles (REEVs). The reduced chip size and optimized design contribute to the creation of smaller modules, lowering overall system costs. Additionally, these devices feature a maximum virtual junction temperature of 185°C and collector-emitter voltage ratings of 750V and 1200V, making them perfect for high-performance applications. They enable automakers to design more efficient and reliable powertrains, extending vehicle range and reducing emissions.

Dr. Jie Shen, Founder and General Manager of Leadrive, remarked:

“As a key IGBT chip supplier and partner to Leadrive, Infineon consistently delivers innovative solutions that provide system-level advantages. The new EDT3 chips optimize loss and loss distribution, support higher operating temperatures, and offer multiple metallization options. These features not only reduce the silicon area per ampere but also accelerate the adoption of advanced packaging technologies.”

The 1200V RC-IGBT improves performance by integrating both IGBT and diode functions into a single chip, providing higher current density compared to separate IGBT and diode chip solutions. This improvement translates to system cost advantages, thanks to the higher current density, scalable chip sizes, and reduced assembly requirements.

Infineon’s latest EDT3 IGBT chip technology is now integrated into the HybridPACK™ Drive G2 automotive power module, offering enhanced performance and features across the entire module product portfolio. This module provides power ranges up to 250 kW in 750V and 1200V grades and incorporates new features such as next-generation phase current sensors and on-chip temperature sensing, contributing to reduced system costs.

All chip devices come with customizable chip layouts, including on-chip temperature and current sensors. Metallization processes such as sintering, welding, and bonding are also available upon request.