onsemi Unveils First-Generation 1200V SiC MOSFET-Based SPM 31 Intelligent Power Module

onsemi has introduced its first-generation SPM 31 Intelligent Power Module (IPM) featuring 1200V silicon carbide (SiC) MOSFETs. Compared to solutions utilizing Field Stop 7 IGBT technology, the EliteSiC™ SPM 31 IPM delivers superior energy efficiency and power density in a compact form factor, resulting in lower total system costs than any other leading solution on the market. With enhanced thermal performance, reduced power losses, and high-speed switching capability, these IPMs are ideal for three-phase inverter drive applications, including electronically commutated (EC) fans for AI data centers, heat pumps, commercial HVAC systems, servo motors, robotics, variable frequency drives (VFDs), and industrial pumps and fans.

The EliteSiC SPM 31 IPM is available in multiple current ratings ranging from 40A to 70A. Combined with onsemi’s existing IGBT-based SPM 31 IPM portfolio, which covers 15A to 35A, the company now offers one of the industry’s most comprehensive, scalable, and flexible integrated power module solutions in a compact package.

Significance of the Technology
In 2023, residential and commercial buildings accounted for 27.6% of the total energy consumption in the United States [1]. With the increasing adoption of electrification and artificial intelligence (AI), particularly as new AI-driven data centers expand and drive higher energy demands, the need for energy-efficient solutions has become more critical than ever. Power semiconductors that enable efficient energy conversion play a vital role in transitioning to a low-carbon future.

As the number and scale of data centers continue to grow, the demand for EC fans is expected to rise as well. These cooling fans maintain optimal operating conditions for data center infrastructure and are essential for ensuring accurate, uninterrupted data transmission. The SiC IPM technology guarantees that EC fans operate with maximum efficiency and reliability.

Like other industrial applications such as compressor drives and pumps, EC fans require higher power density and efficiency than conventional large IGBT-based solutions. By transitioning to the EliteSiC SPM 31 IPM, customers benefit from a smaller footprint, higher performance, and a simplified design that shortens development time, reduces total system costs, and lowers greenhouse gas emissions. For instance, at 70% load, a system using an IGBT-based Power Integrated Module (PIM) typically loses 500W of power. By adopting the EliteSiC SPM 31 IPM, annual energy consumption and costs per EC fan can be reduced by 52%.

How It Works
The fully integrated EliteSiC SPM 31 IPM consists of:
• Independent high-side gate drivers
• Low-voltage integrated circuit (LVIC)
• Six EliteSiC MOSFETs
• A temperature sensor (either a voltage temperature sensor (VTS) or a thermistor)

Built on industry-leading M3 SiC technology, the module is designed to minimize chip size and is optimized for hard-switching applications. In the SPM 31 package, it provides enhanced short-circuit withstand time (SCWT), making it highly suitable for industrial inverter motor drives. The MOSFETs are configured in a three-phase bridge, with the lower bridge featuring separate source connections to offer maximum flexibility when selecting control algorithms.